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VDRM ITGQM ITSM VT0 rT VDClin
= = = = = =
4500 3000 24 1.80 0.70 3000
V A kA V m V
Gate turn-off Thyristor
5SGF 30J4502
PRELIMINARY
Doc. No. 5SYA 1211-04 Aug. 2000
* Patented free-floating silicon technology * Low on-state and switching losses * Annular gate electrode * Industry standard housing * Cosmic radiation withstand rating The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and static losses designed to retro-fit all former 3 kA GTOs of the same voltage. It offers optimal trade-off between on-state and switching losses and is encapsulated in an industry-standard press pack housing 108 mm wide and 26 mm thick. Blocking
VDRM VRRM IDRM IRRM VDClink Repetitive peak off-state voltage Repetitive peak reverse voltage Repetitive peak off-state current Repetitive peak reverse current Permanent DC voltage for 100 FIT failure rate 4500 V 17 V 100 mA 50 mA 3000 V VD = VDRM VR = VRRM VGR 2V RGK = VGR 2V
-40 Tj 125 C. Ambient cosmic radiation at sea level in open air.
Mechanical data (see Fig. 19)
Fm Mounting force A Acceleration: Device unclamped Device clamped M DS Da Weight Surface creepage distance Air strike distance 50 m/s2 200 m/s2 1.3 kg 33 mm 15 mm min. max. 28 kN 38 kN
ABB Semiconductors AG reserves the right to change specifications without notice.
5SGF 30J4502
GTO Data
On-state
ITAVM ITRMS ITSM Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current I2t Limiting load integral 960 A 1510 A 24 kA 40 kA
2 2.88106 A s 2 0.80106 A s
Half sine wave, TC = 85 C
tP tP tP tP IT IT
= = = = =
10 ms 1 ms 10 ms 1 ms 3000 A
Tj =
125C
After surge: VD = VR = 0V
VT VT0 rT IH
On-state voltage Threshold voltage Slope resistance Holding current
3.90 V 1.80 V 0.70 m 100 A
= 400 - 4000 A
Tj =
125 C
Tj
= 25 C
Gate
VGT IGT VGRM IGRM Gate trigger voltage Gate trigger current Repetitive peak reverse voltage Repetitive peak reverse current 1.2 V 2.5 A 17 V 20 mA VGR = VGRM VD RA = 24 V = 0.1 Tj = 25 C
Turn-on switching
di/dtcrit Max. rate of rise of on-state current td tr ton(min) Eon Delay time Rise time Min. on-time Turn-on energy per pulse 500 A/s 1000 A/s 2.5 s 5.0 s 100 s 2.50 Ws f = 200Hz f = 1Hz VD = IT = IT = 3000 A, Tj = 125 C IGM = 25 A, diG/dt = 20 A/s 0.5 VDRM Tj 3000 A 25 A 3 F = 125 C 300 A/s 20 A/s 5
di/dt = diG/dt = RS =
IGM = CS =
Turn-off switching
ITGQM Max controllable turn-off current ts tf toff(min) Eoff IGQM Storage time Fall time Min. off-time Turn-off energy per pulse Peak turn-off gate current 25.0 s 3.0 s 100 s 10.0 Ws 800 A 3000 A VDM = VDRM CS VD Tj = 3 F = 1/2 VDRM = diGQ/dt = LS VDM = 40 A/s 0.2 H VDRM 40 A/s
125 C diGQ/dt =
ITGQ = ITGQM CS LS = 3 F RS 0.2 H = 5
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000 page 2 of 9
5SGF 30J4502
Thermal
Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink Analytical function for transient thermal impedance: 22 K/kW 27 K/kW 12 K/kW 6 K/kW 3 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled -40...125C
Z thJC (t) =
R (1 - e
i
4
i
1 5.4 1.2
2 4.5 0.17
3 1.7 0.01
4 0.4 0.001
- t / i
)
RI (K/kW) i (s)
i=1
Fig. 1
Transient thermal impedance, junction to case.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000 page 3 of 9
5SGF 30J4502
Fig. 2
On-state characteristics
Fig. 3
Average on-state power dissipation vs. average on-state current.
Fig. 4
Surge current and fusing integral vs. pulse width
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000 page 4 of 9
5SGF 30J4502
Fig. 5
Forward blocking voltage vs. gate-cathode resistance.
Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance.
Fig. 7 Forwarde gate current vs. forard gate voltage.
Fig. 8 Gate trigger current vs. junction temperature
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000 page 5 of 9
5SGF 30J4502
Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage.
Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate
Common Test conditions for figures 9, 10 and 11:
diG/dt CS RS Tj
= 20 A/s = 3 F =5 = 125 C
Definition of Turn-on energy:
20 s
E on =
V
0
D
ITdt
(t = 0, IG = 0.1 IGM )
Common Test conditions for figures 12, 13 and 15:
Definition of Turn-off energy:
E off =
40 s
V
0
D
ITdt
( t = 0, IT = 0.9 ITGQ )
Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000 page 6 of 9
5SGF 30J4502
Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current.
Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance.
Fig. 14 Required snubber capacitor vs. max allowable turn-off current.
Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature
Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate.
Fig. 17 Storage time and peak turn-off gate current vs. turn-off current
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000 page 7 of 9
5SGF 30J4502
Fig. 18 General current and voltage waveforms with GTO-specific symbols
Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 1211-04 Aug. 2000 page 8 of 9
5SGF 30J4502 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 s and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10... 15 V.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Fabrikstrasse 2 CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet +41 (0)62 888 6419 +41 (0)62 888 6306 info@ch.abb.com www.abbsem.com
Doc. No. 5SYA 1211-04 Aug. 2000

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